Description
Silicon carbide ceramics have the best oxidation resistance among carbides, but between 1000-1400°C, the oxidation rate of SiC in the air is higher. The volume resistivity of silicon carbide does not change much in the range of 1000-1500°C. With their good chemical stability, high mechanical strength, and thermal shock resistance. Silicon carbide wafers are widely applied in the semiconductor, solar photovoltaic industries.
SSiC material properties:
Composite | (wt %) | SSiC |
Color | Black | |
Density | g/cm3 | 3.15 |
Hardness | HRA | 28 |
Flexural Strength | Mpa(psi*103 ) | 380 |
Gas Permeability | 0 | |
Water Absorption | % | 0 |
Thermal Shock Resistance | °C | – |
Thermal Expansion | ×10-6/℃ | 4 |
Dielectric Constant,20°C | 1MHz | – |
Dielectric loss, tanδ | 1MHz | 2×1014 |
Volume Resistivity,20℃ | Ω·cm | 102-108 |
Dielectric Strength,DC | Ω·cm | – |
Compressive Strength | KV/mm | 3900 |
Fracture Toughness | MPa( psi * 103) | 4 |
Poisson’s Ratio | MPa | 0.14 |
Thermal conductivity | W/mK | 120 |
Type:
Silicon Carbide Ceramic Wafer
Material:
Available Color:
Black
Feature:
High-Heat Resistance.High Corrosion-Resistance, Excellent Wear-Resistance.High Surface Roughness.
Size:
Size Customized, according to customer’s drawing, OEM.
Application:
Technical ceramic.Advanced ceramic.Semiconductor ceramic.
Advantage:
- Tight Tolerances
- Excellent Surface Treatment
- Large outside diameter options, we can reach the largest size to 800mm.
- Excellent Wear-Resistance
- Vairous Delivery Options
- 19 more Years Advanced Ceramics Experience
- Fast Delivery
- Sample projects available
- Free Molding Charge
- Ultrasonic cleaning and dust-free packaging
Package:
Carton+Palletize,Carton,bubble paper inside,Wooden Box.Pls let us know if you have any special requirements.
Producing Methods:
CNC machining with Fine Lapping. Isostatic pressing.Pressureless Sintering.
Tolerance:
Up to ±0.001mm, as customer’s drawing or OEM.
Surface:
Excellent Surface Treatment or according to customer’s requirements.
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