Silicon Carbide Wafer

Silicon carbide ceramics have the best oxidation resistance among carbides, but between 1000-1400°C, the oxidation rate of SiC in the air is higher. The volume resistivity of silicon carbide does not change much in the range of 1000-1500°C.

Description

Silicon carbide ceramics have the best oxidation resistance among carbides, but between 1000-1400°C, the oxidation rate of SiC in the air is higher. The volume resistivity of silicon carbide does not change much in the range of 1000-1500°C. With their good chemical stability, high mechanical strength, and thermal shock resistance. Silicon carbide wafers are widely applied in the semiconductor, solar photovoltaic industries.

SSiC material properties:

Composite (wt %) SSiC
Color   Black
Density g/cm3 3.15
Hardness HRA 28
Flexural Strength Mpa(psi*103 ) 380
Gas Permeability   0
Water Absorption % 0
Thermal Shock Resistance °C
Thermal Expansion ×10-6/℃ 4
Dielectric Constant,20°C 1MHz
Dielectric loss, tanδ 1MHz 2×1014
Volume Resistivity,20℃ Ω·cm 102-108
Dielectric Strength,DC Ω·cm
Compressive Strength KV/mm 3900
Fracture Toughness MPa( psi * 103) 4
Poisson’s Ratio MPa 0.14
Thermal conductivity W/mK 120

Type:

Silicon Carbide Ceramic Wafer

Material:

Sintered Silicon Carbide

Available Color:

Black

Feature:

High-Heat Resistance.High Corrosion-Resistance, Excellent Wear-Resistance.High Surface Roughness.

Size:

Size Customized, according to customer’s drawing, OEM.

Application:

Technical ceramic.Advanced ceramic.Semiconductor ceramic.

Advantage:

  • Tight Tolerances
  • Excellent Surface Treatment
  • Large outside diameter options, we can reach the largest size to 800mm.
  • Excellent Wear-Resistance
  • Vairous Delivery Options
  • 19 more Years Advanced Ceramics Experience
  • Fast Delivery
  • Sample projects available
  • Free Molding Charge
  • Ultrasonic cleaning and dust-free packaging

Package:

Carton+Palletize,Carton,bubble paper inside,Wooden Box.Pls let us know if you have any special requirements.

Producing Methods:

CNC machining with Fine Lapping. Isostatic pressing.Pressureless Sintering.

Tolerance:

Up to ±0.001mm, as customer’s drawing or OEM.

Surface:

Excellent Surface Treatment or according to customer’s requirements.

Additional information

Material

SSiC

Outer Diamerter

Up to 800mm

Thickness

Down to 0.5mm, Down to 1mm

Forming

Dry-pressing, Isostatic-presssing

Processing

RBSiC/SSiC/SiSiC, Reaction Bonded/Pressureless

Customization

Send us your drawing to get our best offers

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