Sintered Silicon carbide ceramics have the best oxidation resistance among carbides, but between 1000-1400°C, the oxidation rate of SiC in the air is higher. The volume resistivity of silicon carbide does not change much in the range of 1000-1500°C. Using this feature can be used as a resistance heating element material. Silicon carbide is widely used in various industrial fields, petroleum, laser, heat treatment, and microelectronics industries.
Material Properties
| Composite | (wt %) | SSiC |
| Color | Black | |
| Density | g/cm3 | 3.15 |
| Hardness | HRA | 28 |
| Flexural Strength | Mpa(psi*103 ) | 380 |
| Gas Permeability | 0 | |
| Water Absorption | % | 0 |
| Thermal Shock Resistance | °C | – |
| Thermal Expansion | ×10-6/℃ | 4 |
| Dielectric Constant,20°C | 1MHz | – |
| Dielectric loss, tanδ | 1MHz | 2×1014 |
| Volume Resistivity,20℃ | Ω·cm | 102-108 |
| Dielectric Strength,DC | Ω·cm | – |
| Compressive Strength | KV/mm | 3900 |
| Fracture Toughness | MPa( psi * 103) | 4 |
| Poisson’s Ratio | MPa | 0.14 |
| Thermal conductivity | W/mK | 120 |
